A 38 ns 4 Mb DRAM with a battery back-up (BBU) mode

Yasuhiro Konishi; Katsumi Dosaka; Takahiro Komatsu; Yoshinori Ionue; Masaki Kumanoya; Yoichi Tobita; Hideki Genjyo; Masao Nagatomo; Tsutomu Yoshihara

A 38 ns 4 Mb DRAM with a battery back-up (BBU) mode

Yasuhiro Konishi^*, Katsumi Dosaka, Takahiro Komatsu, Yoshinori Ionue, Masaki Kumanoya, Yoichi Tobita, Hideki Genjyo, Masao Nagatomo, Tsutomu Yoshihara

^*この研究の対応する著者

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

A 4-Mb DRAM that has 38-ns RAS (row-address-strobe) access time and a battery-backup (BBU) mode, and retains data with a 44-μA current requirement is described. The BBU mode is a self-refresh mode. Its power dissipation, however, is reduced in comparison with that of a normal refresh operation. The memory can operate as a standard 4-Mb DRAM, without any timing constraint on CAS (column-address-strobe) and RAS, if the operating cycle does not exceed 16 ms. This approach promises more stable supply at lower cost than specially provided counterparts such as pseudo-SRAMs.

本文言語	English
ホスト出版物のタイトル	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
出版社	Publ by IEEE
ページ	230-231, 30
出版ステータス	Published - 1990 7月
外部発表	はい
イベント	1990 IEEE International Solid-State Circuits Conference - 37th ISSCC - San Francisco, CA, USA 継続期間: 1990 2月 14 → 1990 2月 16

Other

Other	1990 IEEE International Solid-State Circuits Conference - 37th ISSCC
City	San Francisco, CA, USA
Period	90/2/14 → 90/2/16

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

他のファイルとリンク

引用スタイル

Konishi, Y, Dosaka, K, Komatsu, T, Ionue, Y, Kumanoya, M, Tobita, Y, Genjyo, H, Nagatomo, M & Yoshihara, T 1990, A 38 ns 4 Mb DRAM with a battery back-up (BBU) mode. in Digest of Technical Papers - IEEE International Solid-State Circuits Conference. Publ by IEEE, pp. 230-231, 30, 1990 IEEE International Solid-State Circuits Conference - 37th ISSCC, San Francisco, CA, USA, 90/2/14.

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abstract = "A 4-Mb DRAM that has 38-ns RAS (row-address-strobe) access time and a battery-backup (BBU) mode, and retains data with a 44-μA current requirement is described. The BBU mode is a self-refresh mode. Its power dissipation, however, is reduced in comparison with that of a normal refresh operation. The memory can operate as a standard 4-Mb DRAM, without any timing constraint on CAS (column-address-strobe) and RAS, if the operating cycle does not exceed 16 ms. This approach promises more stable supply at lower cost than specially provided counterparts such as pseudo-SRAMs.",

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AU - Konishi, Yasuhiro

AU - Dosaka, Katsumi

AU - Komatsu, Takahiro

AU - Ionue, Yoshinori

AU - Kumanoya, Masaki

AU - Tobita, Yoichi

AU - Genjyo, Hideki

AU - Nagatomo, Masao

AU - Yoshihara, Tsutomu

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N2 - A 4-Mb DRAM that has 38-ns RAS (row-address-strobe) access time and a battery-backup (BBU) mode, and retains data with a 44-μA current requirement is described. The BBU mode is a self-refresh mode. Its power dissipation, however, is reduced in comparison with that of a normal refresh operation. The memory can operate as a standard 4-Mb DRAM, without any timing constraint on CAS (column-address-strobe) and RAS, if the operating cycle does not exceed 16 ms. This approach promises more stable supply at lower cost than specially provided counterparts such as pseudo-SRAMs.

AB - A 4-Mb DRAM that has 38-ns RAS (row-address-strobe) access time and a battery-backup (BBU) mode, and retains data with a 44-μA current requirement is described. The BBU mode is a self-refresh mode. Its power dissipation, however, is reduced in comparison with that of a normal refresh operation. The memory can operate as a standard 4-Mb DRAM, without any timing constraint on CAS (column-address-strobe) and RAS, if the operating cycle does not exceed 16 ms. This approach promises more stable supply at lower cost than specially provided counterparts such as pseudo-SRAMs.

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BT - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

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T2 - 1990 IEEE International Solid-State Circuits Conference - 37th ISSCC

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A 38 ns 4 Mb DRAM with a battery back-up (BBU) mode

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ASJC Scopus subject areas

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