TY - GEN
T1 - A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology
AU - Kurachi, Satoshi
AU - Murata, Yusuke
AU - Ishikawa, Shohei
AU - Itoh, Nobuyuki
AU - Yonemura, Koji
AU - Yoshimasu, Toshihiko
PY - 2007/12/1
Y1 - 2007/12/1
N2 - This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.
AB - This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.
KW - Resonant circuit
KW - Silicon bipolar/BiCMOS process technology
KW - VCO
KW - Wide tuning range
UR - http://www.scopus.com/inward/record.url?scp=39049126957&partnerID=8YFLogxK
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U2 - 10.1109/BIPOL.2007.4351827
DO - 10.1109/BIPOL.2007.4351827
M3 - Conference contribution
AN - SCOPUS:39049126957
SN - 9781424410194
T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
SP - 9
EP - 12
BT - Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
T2 - 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
Y2 - 30 September 2007 through 2 October 2007
ER -