TY - JOUR
T1 - A 5.5-GHZ sige HBT Doherty amplifier using diode linearizer and lumped-element hybrid coupler
AU - Liu, Haiwen
AU - Yoshimasu, Toshihiko
PY - 2008/6/1
Y1 - 2008/6/1
N2 - A 5.5-GHz Doherty amplifier using commercial 0.35-μm SiGe HBT technology is proposed in this article. To improve the linearity, a predistortion using diode linearizer is adopted for biasing the peak amplifier. Moreover, to realize in fully on-chip with circuit reduction, a 90° 3-dB hybrid coupler and quarter-wave transmission lines are implemented by lumped-elements. In this design, 819 μm2 HBTs are used for carried and peak amplifiers, respectively, and 26 μm2 HBT is used for linearizer. Results verify that the power gain, P1dB, and power added efficiency (PAE) of the proposed Doherty amplifier at 5.5 GHz are 8.4 dB, 31 dBm, and 30%, respectively. Also, the adjacent channel power ratio (ACPR) and the output signal's spectrum mask are given using the 54Mcps 64QAM modulated signal at 10 MHz offset.
AB - A 5.5-GHz Doherty amplifier using commercial 0.35-μm SiGe HBT technology is proposed in this article. To improve the linearity, a predistortion using diode linearizer is adopted for biasing the peak amplifier. Moreover, to realize in fully on-chip with circuit reduction, a 90° 3-dB hybrid coupler and quarter-wave transmission lines are implemented by lumped-elements. In this design, 819 μm2 HBTs are used for carried and peak amplifiers, respectively, and 26 μm2 HBT is used for linearizer. Results verify that the power gain, P1dB, and power added efficiency (PAE) of the proposed Doherty amplifier at 5.5 GHz are 8.4 dB, 31 dBm, and 30%, respectively. Also, the adjacent channel power ratio (ACPR) and the output signal's spectrum mask are given using the 54Mcps 64QAM modulated signal at 10 MHz offset.
KW - Diode linearizer
KW - Doherty amplifier
KW - Lumped-element coupler
KW - SiGe HBT
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U2 - 10.1002/mop.23432
DO - 10.1002/mop.23432
M3 - Article
AN - SCOPUS:43049114610
SN - 0895-2477
VL - 50
SP - 1554
EP - 1558
JO - Microwave and Optical Technology Letters
JF - Microwave and Optical Technology Letters
IS - 6
ER -