抄録
This paper describes a 64-bit two-stage carry look ahead adder utilizing pass transistor BiCMOS gate. The new pass transistor BiCMOS gate has a smaller intrinsic delay time than conventional BiCMOS gates. Furthermore, this gate has a rail-to-rail output voltage. Therefore the next gate does not have a large degradation of its driving capability. The exclusive OR and NOR gate using the pass transistor BiCMOS gate shows a speed advantage over CMOS gates under a wide variance in load capacitance. The pass transistor BiCMOS gates were applied to full adders, carry path circuits, and carry select circuits. In consequence, a 64-bit two-stage carry look ahead adder was fabricated using a 0.5 μm BiCMOS process with single-polysilicon and double-metal interconnections. A critical path delay time of 3.5 ns was observed at a supply voltage of 3.3 V. This is 25% better than the result of the adder circuit using CMOS technology. Even at the supply voltage of 2.0 V, this adder is faster than the CMOS adder.
本文言語 | English |
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ページ(範囲) | 810-817 |
ページ数 | 8 |
ジャーナル | IEEE Journal of Solid-State Circuits |
巻 | 31 |
号 | 6 |
DOI | |
出版ステータス | Published - 1996 6月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学