A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

Tae Yun Kim; Fuminori Kimura; Yusuke Matsui; Tsutomu Yoshihara; Tsukasa Ooishi; Yuji Kihara; Masahiro Hatanaka

doi:10.1109/ASSCC.2005.251679

A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

Tae Yun Kim^*, Fuminori Kimura, Yusuke Matsui, Tsutomu Yoshihara, Tsukasa Ooishi, Yuji Kihara, Masahiro Hatanaka

^*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.

本文言語	English
ホスト出版物のタイトル	2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
ページ	117-120
ページ数	4
DOI	https://doi.org/10.1109/ASSCC.2005.251679
出版ステータス	Published - 2006
イベント	1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 - Hsinchu 継続期間: 2005 11月 1 → 2005 11月 3

Other

Other	1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
City	Hsinchu
Period	05/11/1 → 05/11/3

ASJC Scopus subject areas

電子工学および電気工学
電子材料、光学材料、および磁性材料

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10.1109/ASSCC.2005.251679

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引用スタイル

Kim, TY, Kimura, F, Matsui, Y, Yoshihara, T, Ooishi, T, Kihara, Y & Hatanaka, M 2006, A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system. in 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005., 4017545, pp. 117-120, 1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005, Hsinchu, 05/11/1. https://doi.org/10.1109/ASSCC.2005.251679

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abstract = "In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.",

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AU - Kim, Tae Yun

AU - Kimura, Fuminori

AU - Matsui, Yusuke

AU - Yoshihara, Tsutomu

AU - Ooishi, Tsukasa

AU - Kihara, Yuji

AU - Hatanaka, Masahiro

PY - 2006

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AB - In this paper, we propose a pipe-lined self-reference read scheme of M RAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It Is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system.

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M3 - Conference contribution

AN - SCOPUS:34250747376

SN - 0780391624

SN - 9780780391628

SP - 117

EP - 120

BT - 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005

T2 - 1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005

Y2 - 1 November 2005 through 3 November 2005

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A 75MHz MRAM with pipe-lined self-reference read scheme for mobile/robotics memory system

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