TY - GEN
T1 - A CMOS embedded RF-MEMS tunable capacitor for multi-band/multi-mode smartphones
AU - Kurui, Y.
AU - Yamazaki, H.
AU - Shimooka, Y.
AU - Saito, T.
AU - Ogawa, E.
AU - Ogawa, T.
AU - Ikehashi, T.
AU - Sugizaki, Y.
AU - Shibata, H.
PY - 2012
Y1 - 2012
N2 - This paper reports on 1-chip RF-MEMS tunable capacitor that equips CMOS driver circuit in the underlying layer. A Wafer Level Chip Scale Package (WLCSP) optimized for RF-MEMS is employed to minimize the module size. The MEMS actuation voltage is generated by an Actuation Voltage Generator (AVG). The boost mechanism employed in the AVG enables instant high voltage generation and reduction of the dielectric charging. The measured noise at RF frequencies is less than -120dbm, thanks to a shield metal layer formed between MEMS and CMOS layers. To achieve high power handing and high creep immunity, we employ the previously reported techniques, the Quadruple Series Capacitor (QSC) [1] and the SiN springs [2]. The quality factor measured in the WLCSP is larger than 100 at 1GHz. The capacitance can be changed from 1.4pF to 5pF by a step of 0.45pF.
AB - This paper reports on 1-chip RF-MEMS tunable capacitor that equips CMOS driver circuit in the underlying layer. A Wafer Level Chip Scale Package (WLCSP) optimized for RF-MEMS is employed to minimize the module size. The MEMS actuation voltage is generated by an Actuation Voltage Generator (AVG). The boost mechanism employed in the AVG enables instant high voltage generation and reduction of the dielectric charging. The measured noise at RF frequencies is less than -120dbm, thanks to a shield metal layer formed between MEMS and CMOS layers. To achieve high power handing and high creep immunity, we employ the previously reported techniques, the Quadruple Series Capacitor (QSC) [1] and the SiN springs [2]. The quality factor measured in the WLCSP is larger than 100 at 1GHz. The capacitance can be changed from 1.4pF to 5pF by a step of 0.45pF.
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U2 - 10.1109/ECTC.2012.6248814
DO - 10.1109/ECTC.2012.6248814
M3 - Conference contribution
AN - SCOPUS:84866869473
SN - 9781467319669
T3 - Proceedings - Electronic Components and Technology Conference
SP - 109
EP - 114
BT - 2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
T2 - 2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
Y2 - 29 May 2012 through 1 June 2012
ER -