A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

Yoshihiro Minami; Tomoaki Shino; Atsushi Sakamoto; Tomoki Higashi; Naoki Kusunoki; Katsuyuki Fujita; Kosuke Hatsuda; Takashi Ohsawa; Nobutoshi Aoki; Hiroyoshi Tanimoto; Mutsuo Morikado; Hiroomi Nakajima; Kazumi Inoh; Takeshi Hamamoto; Akihiro Nitayama

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

Yoshihiro Minami^*, Tomoaki Shino, Atsushi Sakamoto, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

^*この研究の対応する著者

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. Two technologies have been newly implemented. (i)In order to realize full functionality and good retention characteristics, the well design has been optimized both for the array device and the peripheral circuit. (ii)Cu wiring has been used for Bit Line(BL) and Source Line(SL), which leads to increasing the signal of the worst bit in the array and also realizes the full compatibility with 90nm CMOS Technology.

本文言語	English
ホスト出版物のタイトル	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
ページ	307-310
ページ数	4
出版ステータス	Published - 2005 12月 1
外部発表	はい
イベント	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States 継続期間: 2005 12月 5 → 2005 12月 7

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
巻	2005
ISSN（印刷版）	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
国/地域	United States
City	Washington, DC, MD
Period	05/12/5 → 05/12/7

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

他のファイルとリンク

引用スタイル

Minami, Y., Shino, T., Sakamoto, A., Higashi, T., Kusunoki, N., Fujita, K., Hatsuda, K., Ohsawa, T., Aoki, N., Tanimoto, H., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., & Nitayama, A. (2005). A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 307-310). Article 1609336 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM. / Minami, Yoshihiro; Shino, Tomoaki; Sakamoto, Atsushi その他.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 307-310 1609336 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

研究成果: Conference contribution

Minami, Y, Shino, T, Sakamoto, A, Higashi, T, Kusunoki, N, Fujita, K, Hatsuda, K, Ohsawa, T, Aoki, N, Tanimoto, H, Morikado, M, Nakajima, H, Inoh, K, Hamamoto, T & Nitayama, A 2005, A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609336, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 307-310, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.

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abstract = "A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. Two technologies have been newly implemented. (i)In order to realize full functionality and good retention characteristics, the well design has been optimized both for the array device and the peripheral circuit. (ii)Cu wiring has been used for Bit Line(BL) and Source Line(SL), which leads to increasing the signal of the worst bit in the array and also realizes the full compatibility with 90nm CMOS Technology.",

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AU - Minami, Yoshihiro

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AU - Higashi, Tomoki

AU - Kusunoki, Naoki

AU - Fujita, Katsuyuki

AU - Hatsuda, Kosuke

AU - Ohsawa, Takashi

AU - Aoki, Nobutoshi

AU - Tanimoto, Hiroyoshi

AU - Morikado, Mutsuo

AU - Nakajima, Hiroomi

AU - Inoh, Kazumi

AU - Hamamoto, Takeshi

AU - Nitayama, Akihiro

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AB - A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. Two technologies have been newly implemented. (i)In order to realize full functionality and good retention characteristics, the well design has been optimized both for the array device and the peripheral circuit. (ii)Cu wiring has been used for Bit Line(BL) and Source Line(SL), which leads to increasing the signal of the worst bit in the array and also realizes the full compatibility with 90nm CMOS Technology.

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BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

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A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

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出版物シリーズ

Other

ASJC Scopus subject areas

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