A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

Takeshi Hamamoto; Yoshihiro Minami; Tomoaki Shino; Atsushi Sakamoto; Tomoki Higashi; Naoki Kusunoki; Katsuyuki Fujita; Kosuke Hatsuda; Takashi Ohsawa; Nobutoshi Aoki; Hiroyoshi Tanimoto; Mutsuo Morikado; Hiroomi Nakajima; Kazumi Inoh; Akihiro Nitayama

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

Takeshi Hamamoto^*, Yoshihiro Minami, Tomoaki Shino, Atsushi Sakamoto, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Akihiro Nitayama

^*この研究の対応する著者

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.

本文言語	English
ホスト出版物のタイトル	2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
出版ステータス	Published - 2006 12月 1
外部発表	はい
イベント	Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference - Padova, Italy 継続期間: 2006 5月 24 → 2006 5月 26

出版物シリーズ

名前	2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Other

Other	Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference
国/地域	Italy
City	Padova
Period	06/5/24 → 06/5/26

ASJC Scopus subject areas

電子工学および電気工学

他のファイルとリンク

引用スタイル

Hamamoto, T., Minami, Y., Shino, T., Sakamoto, A., Higashi, T., Kusunoki, N., Fujita, K., Hatsuda, K., Ohsawa, T., Aoki, N., Tanimoto, H., Morikado, M., Nakajima, H., Inoh, K., & Nitayama, A. (2006). A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 [1669372] (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. / Hamamoto, Takeshi; Minami, Yoshihiro; Shino, Tomoaki その他.
2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06. 2006. 1669372 (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).

研究成果: Conference contribution

Hamamoto, T, Minami, Y, Shino, T, Sakamoto, A, Higashi, T, Kusunoki, N, Fujita, K, Hatsuda, K, Ohsawa, T, Aoki, N, Tanimoto, H, Morikado, M, Nakajima, H, Inoh, K & Nitayama, A 2006, A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. in 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06., 1669372, 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06, Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference, Padova, Italy, 06/5/24.

Hamamoto T, Minami Y, Shino T, Sakamoto A, Higashi T, Kusunoki N その他. A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06. 2006. 1669372. (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).

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abstract = "Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.",

author = "Takeshi Hamamoto and Yoshihiro Minami and Tomoaki Shino and Atsushi Sakamoto and Tomoki Higashi and Naoki Kusunoki and Katsuyuki Fujita and Kosuke Hatsuda and Takashi Ohsawa and Nobutoshi Aoki and Hiroyoshi Tanimoto and Mutsuo Morikado and Hiroomi Nakajima and Kazumi Inoh and Akihiro Nitayama",

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AU - Hamamoto, Takeshi

AU - Minami, Yoshihiro

AU - Shino, Tomoaki

AU - Sakamoto, Atsushi

AU - Higashi, Tomoki

AU - Kusunoki, Naoki

AU - Fujita, Katsuyuki

AU - Hatsuda, Kosuke

AU - Ohsawa, Takashi

AU - Aoki, Nobutoshi

AU - Tanimoto, Hiroyoshi

AU - Morikado, Mutsuo

AU - Nakajima, Hiroomi

AU - Inoh, Kazumi

AU - Nitayama, Akihiro

PY - 2006/12/1

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AB - Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.

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T3 - 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

BT - 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

T2 - Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference

Y2 - 24 May 2006 through 26 May 2006

ER -

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

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出版物シリーズ

Other

ASJC Scopus subject areas

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