A heteroepitaxial multi-atomic-layer system of graphene and h-BN

C. Oshima, N. Tanaka, A. Itoh, E. Rokuta*, K. Yamashita, T. Sakurai

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Multi-atomic-layer systems stacked with monolayer graphene/monolayer h-BN/Ni(111) have been grown in an epitaxial manner. The graphene overlayer formation changes drastically the interfacial interaction between the h-BN layer and Ni(111). As a result, a peculiar property of the monolayer h-BN on Ni(111) changes to a bulklike one. The π-d orbital hybridization at the interface disappears. Accordingly, a metallic character of monolayer h-BN disappears, the soft TO ⊥ phonon returns to the bulk one, and the reduced lattice constant of h-BN on Ni(111) also returns to the bulk one. In contrast, the h-BN overlayer formation does not change the interface between the monolayer graphene and Ni(111). From those data, the strength order of interfacial bonds changes as follows: graphene/Ni(111) > graphene/h-BN > h-BN/Ni(111).

本文言語English
ページ(範囲)521-525
ページ数5
ジャーナルSurface Review and Letters
7
5-6
DOI
出版ステータスPublished - 2000

ASJC Scopus subject areas

  • 材料科学(全般)
  • 表面および界面
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料

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