抄録
A novel circuit technology which introduces a pipeline scheme in a read operation and improves the random-access data rate by roughly 30% is described. This technology has been applied to a 4M DRAM, and the RAM showed a short cycle time of less than 100 ns, i.e., a more than 10-MHz data rate, under the worst operating condition. In addition, a very fast virtual RAS access time of 20 ns has been obtained. Since the pipeline DRAM does not require any new process and/or assembly technologies, it can be added to the standard DRAM family.
本文言語 | English |
---|---|
ページ | 9-10 |
ページ数 | 2 |
出版ステータス | Published - 1990 12月 1 |
外部発表 | はい |
イベント | 1990 Symposium on VLSI Circuits - Honolulu, HI, USA 継続期間: 1990 6月 7 → 1990 6月 9 |
Other
Other | 1990 Symposium on VLSI Circuits |
---|---|
City | Honolulu, HI, USA |
Period | 90/6/7 → 90/6/9 |
ASJC Scopus subject areas
- 工学(全般)