A highly reliable gate/n- overlapped transistor for mega-bit DRAMs

M. Nagatomo; Y. Okumura; K. Mitsui; I. Ogoh; H. Genjoh; M. Inuishi; T. Matsukawa

doi:10.1007/978-3-642-52314-4_192

A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs

M. Nagatomo^*, Y. Okumura, K. Mitsui, I. Ogoh, H. Genjoh, M. Inuishi, T. Matsukawa

^*この研究の対応する著者

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

A noble gate/N^- overlapped Tr. fabricated using oblique rotating ion implantation technique was developed. It is confirmed that this Tr. meets high performance M bit DRAMs' requirements, that is, high drain current, enough punchthrough voltage and low substrate current. The mechanism of this Tr.'s action is analyzed by simulation and is concluded that peak position of electric field is located far from the drain current pass in this Tr.'s structure. The maximum electric field is also relaxed by formation of N^- layer using oblique ion implantation.

本文言語	English
ホスト出版物のタイトル	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
編集者	Anton Heuberger, Heiner Ryssel, Peter Lange
出版社	IEEE Computer Society
ページ	923-926
ページ数	4
ISBN（電子版）	0387510001
ISBN（印刷版）	9780387510002
DOI	https://doi.org/10.1007/978-3-642-52314-4_192
出版ステータス	Published - 1989 1月 1
外部発表	はい
イベント	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany 継続期間: 1989 9月 11 → 1989 9月 14

出版物シリーズ

名前	European Solid-State Device Research Conference
ISSN（印刷版）	1930-8876

Other

Other	19th European Solid State Device Research Conference, ESSDERC 1989
国/地域	Germany
City	Berlin
Period	89/9/11 → 89/9/14

ASJC Scopus subject areas

電子工学および電気工学
安全性、リスク、信頼性、品質管理

文献へのアクセス

10.1007/978-3-642-52314-4_192

他のファイルとリンク

引用スタイル

Nagatomo, M., Okumura, Y., Mitsui, K., Ogoh, I., Genjoh, H., Inuishi, M., & Matsukawa, T. (1989). A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs. In A. Heuberger, H. Ryssel, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 923-926). Article 5437066 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1007/978-3-642-52314-4_192

A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs. / Nagatomo, M.; Okumura, Y.; Mitsui, K. その他.
ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. ed. / Anton Heuberger; Heiner Ryssel; Peter Lange. IEEE Computer Society, 1989. p. 923-926 5437066 (European Solid-State Device Research Conference).

研究成果: Conference contribution

Nagatomo, M, Okumura, Y, Mitsui, K, Ogoh, I, Genjoh, H, Inuishi, M & Matsukawa, T 1989, A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs. in A Heuberger, H Ryssel & P Lange (eds), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5437066, European Solid-State Device Research Conference, IEEE Computer Society, pp. 923-926, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 89/9/11. https://doi.org/10.1007/978-3-642-52314-4_192

Nagatomo M, Okumura Y, Mitsui K, Ogoh I, Genjoh H, Inuishi M その他. A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs. In Heuberger A, Ryssel H, Lange P, editors, ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society. 1989. p. 923-926. 5437066. (European Solid-State Device Research Conference). doi: 10.1007/978-3-642-52314-4_192

@inproceedings{1a0d0e36a801472bbd26cc8cb12113fe,

title = "A highly reliable gate/n- overlapped transistor for mega-bit DRAMs",

abstract = "A noble gate/N- overlapped Tr. fabricated using oblique rotating ion implantation technique was developed. It is confirmed that this Tr. meets high performance M bit DRAMs' requirements, that is, high drain current, enough punchthrough voltage and low substrate current. The mechanism of this Tr.'s action is analyzed by simulation and is concluded that peak position of electric field is located far from the drain current pass in this Tr.'s structure. The maximum electric field is also relaxed by formation of N- layer using oblique ion implantation.",

author = "M. Nagatomo and Y. Okumura and K. Mitsui and I. Ogoh and H. Genjoh and M. Inuishi and T. Matsukawa",

year = "1989",

month = jan,

day = "1",

doi = "10.1007/978-3-642-52314-4_192",

language = "English",

isbn = "9780387510002",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "923--926",

editor = "Anton Heuberger and Heiner Ryssel and Peter Lange",

booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",

note = "19th European Solid State Device Research Conference, ESSDERC 1989 ; Conference date: 11-09-1989 Through 14-09-1989",

}

TY - GEN

T1 - A highly reliable gate/n- overlapped transistor for mega-bit DRAMs

AU - Nagatomo, M.

AU - Okumura, Y.

AU - Mitsui, K.

AU - Ogoh, I.

AU - Genjoh, H.

AU - Inuishi, M.

AU - Matsukawa, T.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - A noble gate/N- overlapped Tr. fabricated using oblique rotating ion implantation technique was developed. It is confirmed that this Tr. meets high performance M bit DRAMs' requirements, that is, high drain current, enough punchthrough voltage and low substrate current. The mechanism of this Tr.'s action is analyzed by simulation and is concluded that peak position of electric field is located far from the drain current pass in this Tr.'s structure. The maximum electric field is also relaxed by formation of N- layer using oblique ion implantation.

AB - A noble gate/N- overlapped Tr. fabricated using oblique rotating ion implantation technique was developed. It is confirmed that this Tr. meets high performance M bit DRAMs' requirements, that is, high drain current, enough punchthrough voltage and low substrate current. The mechanism of this Tr.'s action is analyzed by simulation and is concluded that peak position of electric field is located far from the drain current pass in this Tr.'s structure. The maximum electric field is also relaxed by formation of N- layer using oblique ion implantation.

UR - http://www.scopus.com/inward/record.url?scp=84907853377&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907853377&partnerID=8YFLogxK

U2 - 10.1007/978-3-642-52314-4_192

DO - 10.1007/978-3-642-52314-4_192

M3 - Conference contribution

AN - SCOPUS:84907853377

SN - 9780387510002

T3 - European Solid-State Device Research Conference

SP - 923

EP - 926

BT - ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference

A2 - Heuberger, Anton

A2 - Ryssel, Heiner

A2 - Lange, Peter

PB - IEEE Computer Society

T2 - 19th European Solid State Device Research Conference, ESSDERC 1989

Y2 - 11 September 1989 through 14 September 1989

ER -