A low breakdown-voltage charge pump based on Cockcroft-Walton structure

Renyuan Zhang; Zhangcai Huang; Yasuaki Inoue

doi:10.1109/ASICON.2009.5351433

A low breakdown-voltage charge pump based on Cockcroft-Walton structure

Renyuan Zhang^*, Zhangcai Huang, Yasuaki Inoue

^*この研究の対応する著者

研究成果: Conference contribution

12 被引用数 (Scopus)

抄録

A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.

本文言語	English
ホスト出版物のタイトル	ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC
ページ	328-331
ページ数	4
DOI	https://doi.org/10.1109/ASICON.2009.5351433
出版ステータス	Published - 2009
イベント	2009 8th IEEE International Conference on ASIC, ASICON 2009 - Changsha 継続期間: 2009 10月 20 → 2009 10月 23

Other

Other	2009 8th IEEE International Conference on ASIC, ASICON 2009
City	Changsha
Period	09/10/20 → 09/10/23

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

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10.1109/ASICON.2009.5351433

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引用スタイル

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title = "A low breakdown-voltage charge pump based on Cockcroft-Walton structure",

abstract = "A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.",

keywords = "Boosting efficiency, Breakdown voltage, Cockcroft-Walton type, Power efficiency",

author = "Renyuan Zhang and Zhangcai Huang and Yasuaki Inoue",

year = "2009",

doi = "10.1109/ASICON.2009.5351433",

language = "English",

isbn = "9781424438686",

pages = "328--331",

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note = "2009 8th IEEE International Conference on ASIC, ASICON 2009 ; Conference date: 20-10-2009 Through 23-10-2009",

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TY - GEN

T1 - A low breakdown-voltage charge pump based on Cockcroft-Walton structure

AU - Zhang, Renyuan

AU - Huang, Zhangcai

AU - Inoue, Yasuaki

PY - 2009

Y1 - 2009

N2 - A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.

AB - A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.

KW - Boosting efficiency

KW - Breakdown voltage

KW - Cockcroft-Walton type

KW - Power efficiency

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DO - 10.1109/ASICON.2009.5351433

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AN - SCOPUS:77949408499

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EP - 331

BT - ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC

T2 - 2009 8th IEEE International Conference on ASIC, ASICON 2009

Y2 - 20 October 2009 through 23 October 2009

ER -

A low breakdown-voltage charge pump based on Cockcroft-Walton structure

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