A new architecture for the NVRAM suitable to highdensity applications is described. In the new cell, a dynamic RAM cell is merged into an EEPROM cell. A capacitor is made between the control gate and the drain diffusion layer of the FLOTOX-type EEPROM memory cell. The equivalent circuit in the dynamic RAM mode consists of two transistors and a capacitor, which eliminates a dummy cell. A dynamic RAM sense amplifier is used in both modes, and it works as a data latch when data are transferred between the dynamic RAM part and the EEPROM part. The process of the NVRAM is compatible with ordinary EEPROM's.
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