A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss

Suyang Liu; Yue Zhang; Zijian Zhang; Masahide Inuishi

doi:10.1109/EDTM53872.2022.9798192

A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss

Suyang Liu, Yue Zhang, Zijian Zhang, Masahide Inuishi

大学院情報生産システム研究科

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.

本文言語	English
ホスト出版物のタイトル	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	204-206
ページ数	3
ISBN（電子版）	9781665421775
DOI	https://doi.org/10.1109/EDTM53872.2022.9798192
出版ステータス	Published - 2022
イベント	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan 継続期間: 2022 3月 6 → 2022 3月 9

出版物シリーズ

名前	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
国/地域	Japan
City	Virtual, Online
Period	22/3/6 → 22/3/9

ASJC Scopus subject areas

プロセス化学およびプロセス工学
ハードウェアとアーキテクチャ
電子工学および電気工学
産業および生産工学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/EDTM53872.2022.9798192

他のファイルとリンク

フィンガープリント

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引用スタイル

Liu, S., Zhang, Y., Zhang, Z., & Inuishi, M. (2022). A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 204-206). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9798192

A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. / Liu, Suyang; Zhang, Yue; Zhang, Zijian その他.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 204-206 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

研究成果: Conference contribution

Liu, S, Zhang, Y, Zhang, Z & Inuishi, M 2022, A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 204-206, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 22/3/6. https://doi.org/10.1109/EDTM53872.2022.9798192

Liu S, Zhang Y, Zhang Z, Inuishi M. A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 204-206. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9798192

Liu, Suyang ; Zhang, Yue ; Zhang, Zijian その他. / A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 204-206 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

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abstract = "We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.",

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