A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell

T. Okagaki*, M. Tanizawa, M. Fujinaga, T. Kunikiyo, H. Yuki, K. Ishikawa, Y. Nishikawa, T. Eimori, M. Inuishi, Y. Oji

*この研究の対応する著者

研究成果: Paper査読

抄録

We propose a novel extraction technique of the control gate capacitance coupling coefficient(αg) for stacked gate flash memory cell. Five novel test patterns that the CBCM method is applied to, are developed to directly measure all the capacitances connected to the floating gate. Comparison of extracted αg with the TCAD result proves the validity of this technique. Moreover, we have confirmed that conventional techniques, which use the channel current characteristics, overestimate the αg variation due to channel mobility variation. Therefore direct αg extraction using our proposed technique is necessary for precise process monitoring.

本文言語English
ページ219-222
ページ数4
出版ステータスPublished - 2005 11月 15
外部発表はい
イベントICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures - Leuven, Belgium
継続期間: 2005 4月 42005 4月 7

Other

OtherICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures
国/地域Belgium
CityLeuven
Period05/4/405/4/7

ASJC Scopus subject areas

  • 電子工学および電気工学

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