Acceptor concentration control of p-ZnSe using N₂+He gas plasma by molecular beam epitaxy

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6×10¹⁶ to 7×10¹⁷ cm^-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×10¹⁷ cm^-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N₂ and He gas mixing ratio.