Activation of a particulate Ta                         3                         N                         5                          water-oxidation photoanode with a GaN hole-blocking layer

Yusuke Asakura; Tomohiro Higashi; Hiroshi Nishiyama; Hiroyuki Kobayashi; Mamiko Nakabayashi; Naoya Shibata; Tsutomu Minegishi; Takashi Hisatomi; Masao Katayama; Taro Yamada; Kazunari Domen

doi:10.1039/c7se00402h

Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer

Yusuke Asakura, Tomohiro Higashi, Hiroshi Nishiyama, Hiroyuki Kobayashi, Mamiko Nakabayashi, Naoya Shibata, Tsutomu Minegishi, Takashi Hisatomi, Masao Katayama, Taro Yamada, Kazunari Domen^*

^*この研究の対応する著者

研究成果: Article › 査読

16 被引用数 (Scopus)

抄録

Particulate Ta ₃ N ₅ , a material that responds to visible light for photoelectrochemical O ₂ evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta ₃ N ₅ to the back-contact metal layer and prevented hole-electron recombination.

本文言語	English
ページ（範囲）	73-78
ページ数	6
ジャーナル	Sustainable Energy and Fuels
巻	2
号	1
DOI	https://doi.org/10.1039/c7se00402h
出版ステータス	Published - 2018
外部発表	はい

ASJC Scopus subject areas

再生可能エネルギー、持続可能性、環境
燃料技術
エネルギー工学および電力技術

文献へのアクセス

10.1039/c7se00402h

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引用スタイル

Asakura, Y., Higashi, T., Nishiyama, H., Kobayashi, H., Nakabayashi, M., Shibata, N., Minegishi, T., Hisatomi, T., Katayama, M., Yamada, T., & Domen, K. (2018). Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer Sustainable Energy and Fuels, 2(1), 73-78. https://doi.org/10.1039/c7se00402h

Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer . / Asakura, Yusuke; Higashi, Tomohiro; Nishiyama, Hiroshi その他.
In: Sustainable Energy and Fuels, Vol. 2, No. 1, 2018, p. 73-78.

研究成果: Article › 査読

Asakura, Y, Higashi, T, Nishiyama, H, Kobayashi, H, Nakabayashi, M, Shibata, N, Minegishi, T, Hisatomi, T, Katayama, M, Yamada, T & Domen, K 2018, ' Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer ', Sustainable Energy and Fuels, vol. 2, no. 1, pp. 73-78. https://doi.org/10.1039/c7se00402h

Asakura Y, Higashi T, Nishiyama H, Kobayashi H, Nakabayashi M, Shibata N その他. Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer Sustainable Energy and Fuels. 2018;2(1):73-78. doi: 10.1039/c7se00402h

Asakura, Yusuke ; Higashi, Tomohiro ; Nishiyama, Hiroshi その他. / Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer In: Sustainable Energy and Fuels. 2018 ; Vol. 2, No. 1. pp. 73-78.

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abstract = " Particulate Ta 3 N 5 , a material that responds to visible light for photoelectrochemical O 2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta 3 N 5 to the back-contact metal layer and prevented hole-electron recombination.",

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AU - Nakabayashi, Mamiko

AU - Shibata, Naoya

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AU - Katayama, Masao

AU - Yamada, Taro

AU - Domen, Kazunari

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Activation of a particulate Ta 3 N 5 water-oxidation photoanode with a GaN hole-blocking layer

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Activation of a particulate Ta ₃ N ₅ water-oxidation photoanode with a GaN hole-blocking layer