TY - GEN
T1 - Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons
AU - Murakami, Mio M.
AU - Kobayashi, Yoshihito
AU - Kokubun, Motohide
AU - Takahashi, Isao
AU - Okada, Yuu
AU - Kawaharada, Madoka
AU - Nakazawa, Kazuhiro
AU - Walanabe, Shin
AU - Sato, Goro
AU - Kouda, Manabu
AU - Mitani, Takefumi
AU - Takahashi, Tadayuki
AU - Suzuki, Masaya
AU - Tashiro, Makoto
AU - Makishima, Kazuo
PY - 2002
Y1 - 2002
N2 - With its high stopping power, Cadmium Telluride (CdTe) has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors, and unproved significantly during this decade. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons. We irradiated Scbottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced radio-activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that activation background level of the CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation, and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are enough tolerant to radioactivity in orbit.
AB - With its high stopping power, Cadmium Telluride (CdTe) has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors, and unproved significantly during this decade. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons. We irradiated Scbottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced radio-activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that activation background level of the CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation, and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are enough tolerant to radioactivity in orbit.
KW - Activation
KW - CdTe
KW - Proton
KW - Radiation damage
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M3 - Conference contribution
AN - SCOPUS:0142241300
VL - 1
SP - 269
EP - 273
BT - IEEE Nuclear Science Symposium and Medical Imaging Conference
A2 - Metzler, S.
T2 - 2002 IEEE Nuclear Science Symposium Conference Record
Y2 - 10 November 2002 through 16 November 2002
ER -