Activation properties of Schottky CdTe diodes irradiated by 150 MeV protons

Mio M. Murakami*, Yoshihito Kobayashi, Motohide Kokubun, Isao Takahashi, Yuu Okada, Madoka Kawaharada, Kazuhiro Nakazawa, Shin Walanabe, Goro Sato, Manabu Kouda, Takefumi Mitani, Tadayuki Takahashi, Masaya Suzuki, Makoto Tashiro, Kazuo Makishima


研究成果: Conference contribution


With its high stopping power, Cadmium Telluride (CdTe) has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors, and unproved significantly during this decade. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons. We irradiated Scbottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced radio-activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that activation background level of the CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation, and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are enough tolerant to radioactivity in orbit.

ホスト出版物のタイトルIEEE Nuclear Science Symposium and Medical Imaging Conference
編集者S. Metzler
出版ステータスPublished - 2002
イベント2002 IEEE Nuclear Science Symposium Conference Record - Norfolk, VA
継続期間: 2002 11月 102002 11月 16


Other2002 IEEE Nuclear Science Symposium Conference Record
CityNorfolk, VA

ASJC Scopus subject areas

  • コンピュータ ビジョンおよびパターン認識
  • 産業および生産工学


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