Activation properties of schottky CdTe diodes irradiated by 150 MeV protons

Mio M. Murakami; Yoshihito Kobayashi; Motohide Kokubun; Isao Takahashi; Yuu Okada; Madoka Kawaharada; Kazuhiro Nakazawa; Shin Watanabe; Goro Sato; Manabu Kouda; Takefumi Mitani; Tadayuki Takahashi; Masaya Suzuki; Makoto Tashiro; Satoshi Kawasoe; Masaharu Nomachi; Kazuo Makishima

doi:10.1109/TNS.2003.815120

Activation properties of schottky CdTe diodes irradiated by 150 MeV protons

Mio M. Murakami^*, Yoshihito Kobayashi, Motohide Kokubun, Isao Takahashi, Yuu Okada, Madoka Kawaharada, Kazuhiro Nakazawa, Shin Watanabe, Goro Sato, Manabu Kouda, Takefumi Mitani, Tadayuki Takahashi, Masaya Suzuki, Makoto Tashiro, Satoshi Kawasoe, Masaharu Nomachi, Kazuo Makishima

^*この研究の対応する著者

研究成果: Article › 査読

13 被引用数 (Scopus)

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Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.

本文言語	English
ページ（範囲）	1013-1019
ページ数	7
ジャーナル	IEEE Transactions on Nuclear Science
巻	50
号	4 II
DOI	https://doi.org/10.1109/TNS.2003.815120
出版ステータス	Published - 2003 8月

ASJC Scopus subject areas

電子工学および電気工学
原子力エネルギーおよび原子力工学

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10.1109/TNS.2003.815120

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Murakami, M. M., Kobayashi, Y., Kokubun, M., Takahashi, I., Okada, Y., Kawaharada, M., Nakazawa, K., Watanabe, S., Sato, G., Kouda, M., Mitani, T., Takahashi, T., Suzuki, M., Tashiro, M., Kawasoe, S., Nomachi, M., & Makishima, K. (2003). Activation properties of schottky CdTe diodes irradiated by 150 MeV protons. IEEE Transactions on Nuclear Science, 50(4 II), 1013-1019. https://doi.org/10.1109/TNS.2003.815120

Murakami, MM, Kobayashi, Y, Kokubun, M, Takahashi, I, Okada, Y, Kawaharada, M, Nakazawa, K, Watanabe, S, Sato, G, Kouda, M, Mitani, T, Takahashi, T, Suzuki, M, Tashiro, M, Kawasoe, S, Nomachi, M & Makishima, K 2003, 'Activation properties of schottky CdTe diodes irradiated by 150 MeV protons', IEEE Transactions on Nuclear Science, vol. 50, no. 4 II, pp. 1013-1019. https://doi.org/10.1109/TNS.2003.815120

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title = "Activation properties of schottky CdTe diodes irradiated by 150 MeV protons",

abstract = "Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.",

keywords = "Activation, CdTe, Proton, Radiation damage",

author = "Murakami, {Mio M.} and Yoshihito Kobayashi and Motohide Kokubun and Isao Takahashi and Yuu Okada and Madoka Kawaharada and Kazuhiro Nakazawa and Shin Watanabe and Goro Sato and Manabu Kouda and Takefumi Mitani and Tadayuki Takahashi and Masaya Suzuki and Makoto Tashiro and Satoshi Kawasoe and Masaharu Nomachi and Kazuo Makishima",

year = "2003",

month = aug,

doi = "10.1109/TNS.2003.815120",

language = "English",

volume = "50",

pages = "1013--1019",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Activation properties of schottky CdTe diodes irradiated by 150 MeV protons

AU - Murakami, Mio M.

AU - Kobayashi, Yoshihito

AU - Kokubun, Motohide

AU - Takahashi, Isao

AU - Okada, Yuu

AU - Kawaharada, Madoka

AU - Nakazawa, Kazuhiro

AU - Watanabe, Shin

AU - Sato, Goro

AU - Kouda, Manabu

AU - Mitani, Takefumi

AU - Takahashi, Tadayuki

AU - Suzuki, Masaya

AU - Tashiro, Makoto

AU - Kawasoe, Satoshi

AU - Nomachi, Masaharu

AU - Makishima, Kazuo

PY - 2003/8

Y1 - 2003/8

N2 - Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.

AB - Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.

KW - Activation

KW - CdTe

KW - Proton

KW - Radiation damage

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Activation properties of schottky CdTe diodes irradiated by 150 MeV protons

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