Advantage of highly concentrated (≥90%) ozone for chemical vapor deposition SiO₂ grown under 200 °c using hexamethyldisilazane and ultraviolet light excited ozone

We have compared the UV-light-excited ozone chemical vapor deposition (CVD) process conditions and the film quality for the cases where either highly concentrated (≥90%: HC) or 7% ozone and either hexamethyldisilazane (HMDS) or tetraethoxysilane (TEOS) are used. The SiO₂ film deposited using HMDS and UV-excited HC ozone with an optimized flow rate has the highest quality in terms of leakage current density, etching rate, and deposition rate which are comparable or superior to those of the conventional thermal TEOS SiO ₂ grown at 620 °C. These results lead to a conclusion that it is preferable to use HC ozone for UV-light-excited-ozone CVD to deposit the high quality SiO₂ films at a practical rate at a temperature as low as 200°C.