Advantage of highly concentrated (≥90%) ozone for chemical vapor deposition SiO₂ grown under 200 °c using hexamethyldisilazane and ultraviolet light excited ozone

Naoto Kameda^*, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

^*この研究の対応する著者

研究成果: Article › 査読

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Advantage of highly concentrated (≥90%) ozone for chemical vapor deposition SiO₂ grown under 200 °c using hexamethyldisilazane and ultraviolet light excited ozone

フィンガープリント

Engineering & Materials Science

Physics & Astronomy

Advantage of highly concentrated (≥90%) ozone for chemical vapor deposition SiO2 grown under 200 °c using hexamethyldisilazane and ultraviolet light excited ozone

フィンガープリント

Engineering & Materials Science

Physics & Astronomy

Advantage of highly concentrated (≥90%) ozone for chemical vapor deposition SiO₂ grown under 200 °c using hexamethyldisilazane and ultraviolet light excited ozone