Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Tamotsu Hashizume; Sanguan Anantathanasarn; Noboru Negoro; Eiichi Sano; Hideki Hasegawa; Kazuhide Kumakura; Toshiki Makimoto

doi:10.1143/jjap.43.l777

Al₂O₃ insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Tamotsu Hashizume^*, Sanguan Anantathanasarn, Noboru Negoro, Eiichi Sano, Hideki Hasegawa, Kazuhide Kumakura, Toshiki Makimoto

^*この研究の対応する著者

研究成果: Article › 査読

83 被引用数 (Scopus)

抄録

An Al₂O₃ insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al_0.2Ga_0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al₂O₃ IG device showed successful gate control of drain current up to V_GS = +4V without leakage problems. The threshold voltage in the Al₂O₃ IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

本文言語	English
ページ（範囲）	L777-L779
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	43
号	6 B
DOI	https://doi.org/10.1143/jjap.43.l777
出版ステータス	Published - 2004 6月 15
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/jjap.43.l777

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引用スタイル

@article{407a35c0898d4b62aa9c0b462a3e7cc4,

title = "Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers",

abstract = "An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.",

keywords = "AlGaN, AlO, GaN, HFET, Insulated gate, Normally-off",

author = "Tamotsu Hashizume and Sanguan Anantathanasarn and Noboru Negoro and Eiichi Sano and Hideki Hasegawa and Kazuhide Kumakura and Toshiki Makimoto",

year = "2004",

month = jun,

day = "15",

doi = "10.1143/jjap.43.l777",

language = "English",

volume = "43",

pages = "L777--L779",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 B",

}

TY - JOUR

T1 - Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

AU - Hashizume, Tamotsu

AU - Anantathanasarn, Sanguan

AU - Negoro, Noboru

AU - Sano, Eiichi

AU - Hasegawa, Hideki

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

PY - 2004/6/15

Y1 - 2004/6/15

N2 - An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

AB - An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

KW - AlGaN

KW - AlO

KW - GaN

KW - HFET

KW - Insulated gate

KW - Normally-off

UR - http://www.scopus.com/inward/record.url?scp=4243167992&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243167992&partnerID=8YFLogxK

U2 - 10.1143/jjap.43.l777

DO - 10.1143/jjap.43.l777

M3 - Article

AN - SCOPUS:4243167992

SN - 0021-4922

VL - 43

SP - L777-L779

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 6 B

ER -