TY - JOUR
T1 - Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal
AU - Bisri, Satria Zulkarnaen
AU - Takahashi, Tetsuo
AU - Takenobu, Taishi
AU - Yahiro, Masayuki
AU - Adachi, Chihaya
AU - Iwasa, Yoshihiro
PY - 2007/6/15
Y1 - 2007/6/15
N2 - An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.
AB - An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.
KW - Ambipolar transistor
KW - Condensed aromatic hydrocarbon
KW - Electrodes
KW - Electron traps
KW - Molecular crystal
KW - Organic field-effect transistor
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U2 - 10.1143/JJAP.46.L596
DO - 10.1143/JJAP.46.L596
M3 - Article
AN - SCOPUS:34547838372
SN - 0021-4922
VL - 46
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 20-24
ER -