抄録
We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p - and n -channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1× 10-2 cm2 V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.
| 本文言語 | English |
|---|---|
| 論文番号 | 033505 |
| ページ（範囲） | 1-3 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 88 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2006 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）