TY - JOUR
T1 - Amplitude/phase temperature compensation attenuators with variable-Q FET Resonators
AU - Hangai, Masatake
AU - Asao, Hideki
AU - Hieda, Morishige
AU - Yamaguchi, Mamiko
AU - Miyazaki, Moriyasu
PY - 2008/12
Y1 - 2008/12
N2 - Amplitude/phase temperature compensation attenuators have been developed. The circuits are based on new variable-Q field-effect transistor resonators. By employing the configuration, the dynamic range of the attenuation and the phase-shift can be flexibly determined. To verify this methodology, we have fabricated a low phase-shift temperature compensation attenuator and an amplitude/phase temperature compensation attenuator with monolithic microwave integrated circuit technology. The low phase-shift circuit achieved an attenuation dynamic range of 16.9 dB, a phase shift of 5.2°, and a minimum insertion loss of 4.5 dB in X-band over 75 °C temperature variation. The amplitude/phase compensation circuit achieved an attenuation dynamic range of 11.7 dB, a phase shift of +37°, and a minimum insertion loss of 4.9 dB in X-band over 75 °C temperature variation.
AB - Amplitude/phase temperature compensation attenuators have been developed. The circuits are based on new variable-Q field-effect transistor resonators. By employing the configuration, the dynamic range of the attenuation and the phase-shift can be flexibly determined. To verify this methodology, we have fabricated a low phase-shift temperature compensation attenuator and an amplitude/phase temperature compensation attenuator with monolithic microwave integrated circuit technology. The low phase-shift circuit achieved an attenuation dynamic range of 16.9 dB, a phase shift of 5.2°, and a minimum insertion loss of 4.5 dB in X-band over 75 °C temperature variation. The amplitude/phase compensation circuit achieved an attenuation dynamic range of 11.7 dB, a phase shift of +37°, and a minimum insertion loss of 4.9 dB in X-band over 75 °C temperature variation.
KW - Attenuator
KW - Field-effect transistor (FET)
KW - Monolithic microwave integrated circuit (MMIC)
KW - Schottky diodes
KW - Temperature compensation
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U2 - 10.1109/TMTT.2008.2007088
DO - 10.1109/TMTT.2008.2007088
M3 - Article
AN - SCOPUS:57849102077
SN - 0018-9480
VL - 56
SP - 3058
EP - 3065
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 12
M1 - 4682592
ER -