TY - JOUR
T1 - An advanced effective capacitance model for calculating gate delay considering input waveform effect
AU - Jiang, Minglu
AU - Huang, Zhangcai
AU - Kurokawa, Atsushi
AU - Li, Na
AU - Inoue, Yasuaki
PY - 2008/10
Y1 - 2008/10
N2 - In deep submicron designs, predicting gate delay time is a noteworthy work for Static Timing Analysis. The effective capacitance Ceff concept is usually used to calculate the gate delay with interconnect loads. Conventionally, the input-signal to the gate is always assumed as a ramp waveform. However, the input signal is also the output of CMOS gates with interconnect loads and not the ramp waveform. Thus the simple assumption as a ramp signal results in significant influence on the delay calculation. In this paper, an advanced effective capacitance model is proposed to consider both the input waveform effect and the interconnect loads, where the nonlinear influence of input waveform is modeled as one part of the effective capacitance for calculating the gate delay. Experimental results show a significant improvement in accuracy when the input waveform effect is considered.
AB - In deep submicron designs, predicting gate delay time is a noteworthy work for Static Timing Analysis. The effective capacitance Ceff concept is usually used to calculate the gate delay with interconnect loads. Conventionally, the input-signal to the gate is always assumed as a ramp waveform. However, the input signal is also the output of CMOS gates with interconnect loads and not the ramp waveform. Thus the simple assumption as a ramp signal results in significant influence on the delay calculation. In this paper, an advanced effective capacitance model is proposed to consider both the input waveform effect and the interconnect loads, where the nonlinear influence of input waveform is modeled as one part of the effective capacitance for calculating the gate delay. Experimental results show a significant improvement in accuracy when the input waveform effect is considered.
KW - CMOS gate
KW - Effective capacitance
KW - Gate delay
KW - Input waveform effect
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M3 - Article
AN - SCOPUS:55349135952
SN - 1022-4653
VL - 17
SP - 633
EP - 639
JO - Chinese Journal of Electronics
JF - Chinese Journal of Electronics
IS - 4
ER -