@article{96fef2dd3f124413a69da996bbe03cdb,
title = "An all-solid-state pH sensor employing fluorine-terminated polycrystalline boron-doped diamond as a pH-insensitive solution-gate field-effect transistor",
abstract = "A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.",
keywords = "All-solid-state pH sensor, Electrolyte-solution-gate field-effect transistor, Fluorine-termination, PH-insensitivity, Polycrystalline boron-doped diamond",
author = "Yukihiro Shintani and Mikinori Kobayashi and Hiroshi Kawarada",
note = "Funding Information: A part of this study was supported by JST's (Japan Science and Technology) adaptable and seamless technology transfer program through target-driven R&D (A-STEP). The authors also appreciate the assistance of Nano Technology Research Center (NTRC) of Waseda University for the use of their equipment. Publisher Copyright: {\textcopyright} 2017 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2017",
month = may,
day = "5",
doi = "10.3390/s17051040",
language = "English",
volume = "17",
journal = "Sensors (Switzerland)",
issn = "1424-8220",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "5",
}