抄録
The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 4104-4106 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 84 |
| 号 | 20 |
| DOI | |
| 出版ステータス | Published - 2004 5月 17 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）