TY - JOUR
T1 - An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions
AU - Sato, Yuuki
AU - Gozu, Shin ichiro
AU - Kita, Tomohiro
AU - Yamada, Syoji
PY - 2001/5
Y1 - 2001/5
N2 - We investigated zero-field spin-splitting in normal-type In0.75Ga0.25As/In0.75Al0.25As heterostructure by magnetoresistance measurements at 1.5K. The maximum value of spin-orbit interaction parameter, αzero, obtained here is 32×10-12eVm. We also confirmed a tuning of αzero by applying gate biases. On the other hand, we observed no beat oscillation when the In0.75Ga0.25As well width decreased from 30 to 10nm. These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.
AB - We investigated zero-field spin-splitting in normal-type In0.75Ga0.25As/In0.75Al0.25As heterostructure by magnetoresistance measurements at 1.5K. The maximum value of spin-orbit interaction parameter, αzero, obtained here is 32×10-12eVm. We also confirmed a tuning of αzero by applying gate biases. On the other hand, we observed no beat oscillation when the In0.75Ga0.25As well width decreased from 30 to 10nm. These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.
KW - Narrow gap HEMT
KW - Wave function penetration
KW - Zero-field spin-splitting
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U2 - 10.1016/S1386-9477(01)00057-1
DO - 10.1016/S1386-9477(01)00057-1
M3 - Article
AN - SCOPUS:0035338078
SN - 1386-9477
VL - 10
SP - 77
EP - 80
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-3
ER -