TY - JOUR
T1 - Anatase-type TiO2 thin films produced by lattice deformation
AU - Sugimura, Wataru
AU - Yamazaki, Atsushi
AU - Shigetani, Hisashi
AU - Tanaka, Junzo
AU - Mitsuhashi, Takefumi
PY - 1997/12
Y1 - 1997/12
N2 - TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.
AB - TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.
KW - Anatase
KW - Lattice mismatch
KW - Molecular beam epitaxy
KW - Thin film
KW - TiO
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U2 - 10.1143/jjap.36.7358
DO - 10.1143/jjap.36.7358
M3 - Article
AN - SCOPUS:0031340063
SN - 0021-4922
VL - 36
SP - 7358
EP - 7359
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 12 A
ER -