抄録
We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [1̄10] direction, suggesting that N passivation proceeds in the [1̄10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 955-957 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 68 |
| 号 | 7 |
| DOI | |
| 出版ステータス | Published - 1996 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）