TY - JOUR
T1 - Annealing behavior of spin density in UHV evaporated amorphous silicon
AU - Yonehara, Takao
AU - Saitoh, Toshio
AU - Kawarada, Hiroshi
AU - Hirata, Tohru
AU - Kakumu, Masakazu
AU - Ohdomari, Iwao
PY - 1980
Y1 - 1980
N2 - The ESR of amorphous silicon films evaporated in UHV has been measured at room temperature. Up to 900°C the annealing behavior of the spin density in the amorphous silicon films is quite different from that of films deposited in conventional HV.
AB - The ESR of amorphous silicon films evaporated in UHV has been measured at room temperature. Up to 900°C the annealing behavior of the spin density in the amorphous silicon films is quite different from that of films deposited in conventional HV.
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U2 - 10.1016/0375-9601(80)90695-7
DO - 10.1016/0375-9601(80)90695-7
M3 - Article
AN - SCOPUS:85012807315
SN - 0375-9601
VL - 78
SP - 192
EP - 194
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
IS - 2
ER -