Application and device modeling of diamond FET using surface semiconductive layers

K. Tsugawa*, H. Noda, A. Hokazono, K. Kitatani, K. Monta, H. Kawarada

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Hydrogen-terminated diamond surfaces exhibit p-type conduction without doping impurities. The surface conductive layers possess a suitable thickness of ∼10 nm for FET channels. The present work describes the fabrication of high-performance MESFETs and MOSFETs using the surface conductive layers on hydrogen-terminated homoepitaxial CVD diamond films. In the case of MESFETs, both enhancement-mode (normally off) and depletion-mode (normally on) operations are realized by selecting the gate metals. In the case of MOSFETs, depletion-mode operation is realized at present. The best transconductances in diamond are obtained in both MESFETs and MOSFETs. In addition, the dc operation of the diamond surface-channel FETs has been evaluated with device simulations using several models for the surface conductive layer. Consequently, a model with acceptors distributed two-dimensionally on the surface reproduces the actual I-V characteristics. Moreover, based on the model, the dc performance of self-aligned 1-μm-gate MESFETs not realized in diamond has been simulated. As a result, their transconductances exceed 100 mS-mm-1.

ASJC Scopus subject areas

  • 物理学および天文学一般
  • コンピュータ ネットワークおよび通信
  • 電子工学および電気工学

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