Application of 100% ozone gas process to rapid low-temperature oxidation

H. Nonaka; Shingo Ichimura; T. Nishiguchi; Y. Morikawa; M. Kekura; M. Miyamoto

doi:10.1109/RTP.2002.1039449

Application of 100% ozone gas process to rapid low-temperature oxidation

H. Nonaka, Shingo Ichimura, T. Nishiguchi, Y. Morikawa, M. Kekura, M. Miyamoto

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO₂ films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO₂ film within 4 minutes at 400°C. A very low excitation energy observed for the SiO₂ film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO₂ films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×10¹⁰ cm^-2eV^-1) and high breakdown voltage (>13 MVcm^-1).

本文言語	English
ホスト出版物のタイトル	10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	119-123
ページ数	5
ISBN（電子版）	0780374657, 9780780374652
DOI	https://doi.org/10.1109/RTP.2002.1039449
出版ステータス	Published - 2002 1月 1
外部発表	はい
イベント	10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 - Vancouver, Canada 継続期間: 2002 9月 25 → 2002 9月 27

Other

Other	10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
国/地域	Canada
City	Vancouver
Period	02/9/25 → 02/9/27

ASJC Scopus subject areas

電子工学および電気工学
産業および生産工学

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10.1109/RTP.2002.1039449

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引用スタイル

Nonaka, H., Ichimura, S., Nishiguchi, T., Morikawa, Y., Kekura, M., & Miyamoto, M. (2002). Application of 100% ozone gas process to rapid low-temperature oxidation. In 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 (pp. 119-123). 記事 1039449 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RTP.2002.1039449

Nonaka, H, Ichimura, S, Nishiguchi, T, Morikawa, Y, Kekura, M & Miyamoto, M 2002, Application of 100% ozone gas process to rapid low-temperature oxidation. in 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002., 1039449, Institute of Electrical and Electronics Engineers Inc., pp. 119-123, 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002, Vancouver, Canada, 02/9/25. https://doi.org/10.1109/RTP.2002.1039449

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abstract = "A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO2 films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO2 film within 4 minutes at 400°C. A very low excitation energy observed for the SiO2 film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO2 films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×1010 cm-2eV-1) and high breakdown voltage (>13 MVcm-1).",

author = "H. Nonaka and Shingo Ichimura and T. Nishiguchi and Y. Morikawa and M. Kekura and M. Miyamoto",

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AU - Miyamoto, M.

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N2 - A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO2 films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO2 film within 4 minutes at 400°C. A very low excitation energy observed for the SiO2 film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO2 films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×1010 cm-2eV-1) and high breakdown voltage (>13 MVcm-1).

AB - A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO2 films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO2 film within 4 minutes at 400°C. A very low excitation energy observed for the SiO2 film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO2 films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×1010 cm-2eV-1) and high breakdown voltage (>13 MVcm-1).

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Application of 100% ozone gas process to rapid low-temperature oxidation

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