@article{5c4f641e8c8344f88d9cd9757d03e9e9,
title = "Application of 2DHG Diamond p-FET in Cascode with Normally-OFF Operation and a Breakdown Voltage of over 1.7 kV",
abstract = "Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV.",
keywords = "C-H diamond, cascode, normally-OFF, p-channel field-effect transistor (p-FETs)",
author = "Te Bi and Junxiong Niu and Nobutaka Oi and Masafumi Inaba and Toshio Sasaki and Hiroshi Kawarada",
note = "Funding Information: Manuscript received March 31, 2020; revised May 21, 2020 and July 14, 2020; accepted August 17, 2020. Date of publication September 9, 2020; date of current version September 22, 2020. This work was supported by the Research Organization for Nano & Life Innovation, Waseda University. The review of this article was arranged by Editor J. Shi. (Corresponding author: Hiroshi Kawarada.) Te Bi, Junxiong Niu, Nobutaka Oi, and Masafumi Inaba are with the Faculty of Science and Engineering, Waseda University, Shinjuku 169-8555, Japan. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2020",
month = oct,
doi = "10.1109/TED.2020.3019020",
language = "English",
volume = "67",
pages = "4006--4009",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}