Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films

S. Ichimura; H. Nonaka; A. Kurokawa; K. Nakamura

Application of high purity ozone beam in the formation and characterization of SiO₂ and other oxide thin films

S. Ichimura^*, H. Nonaka, A. Kurokawa, K. Nakamura

^*この研究の対応する著者

研究成果: Paper › 査読

1 被引用数 (Scopus)

抄録

A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO₂ thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO₂/Si interface was suppressed by the ozone oxidation, and iii) a stable SiO₂ film was formed by the ozone exposure at a higher substrate temperature (>about 300 °C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the thickness of a SiO₂ sample is in the order of sub mm.

本文言語	English
ページ	100-109
ページ数	10
出版ステータス	Published - 1998 1月 1
外部発表	はい
イベント	Proceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3 - Paris, Fr 継続期間: 1998 6月 29 → 1998 7月 3

Other

Other	Proceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3
City	Paris, Fr
Period	98/6/29 → 98/7/3

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

引用スタイル

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title = "Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films",

abstract = "A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii) a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300 °C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the thickness of a SiO2 sample is in the order of sub mm.",

author = "S. Ichimura and H. Nonaka and A. Kurokawa and K. Nakamura",

year = "1998",

month = jan,

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note = "Proceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3 ; Conference date: 29-06-1998 Through 03-07-1998",

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T1 - Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films

AU - Ichimura, S.

AU - Nonaka, H.

AU - Kurokawa, A.

AU - Nakamura, K.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii) a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300 °C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the thickness of a SiO2 sample is in the order of sub mm.

AB - A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii) a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300 °C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the thickness of a SiO2 sample is in the order of sub mm.

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T2 - Proceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3

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