TY - GEN
T1 - Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit
AU - Matsumoto, A.
AU - Takei, Y.
AU - Akahane, K.
AU - Matsui, S.
AU - Umezawa, T.
AU - Yamamoto, N.
AU - Matsushima, Y.
AU - Utaka, K.
N1 - Funding Information:
This work was partly supported by JSPS KAKENHI (Grant-in-Aid for Young Scientists (B); Grant Number 26820133), and by NEDO through its Future Pioneering Projects.
PY - 2016/12/16
Y1 - 2016/12/16
N2 - We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.
AB - We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.
UR - http://www.scopus.com/inward/record.url?scp=85010685443&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010685443&partnerID=8YFLogxK
U2 - 10.1364/cleo_si.2016.sm4r.5
DO - 10.1364/cleo_si.2016.sm4r.5
M3 - Conference contribution
AN - SCOPUS:85010685443
T3 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
Y2 - 5 June 2016 through 10 June 2016
ER -