Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura; Godai Koike; Akira Komatsubara; Tokuyuki Teraji; Shinobu Onoda; Liam P. McGuinness; Lachlan Rogers; Boris Naydenov; E. Wu; Liu Yan; Fedor Jelezko; Takeshi Ohshima; Junichi Isoya; Takahiro Shinada; Takashi Tanii

doi:10.7567/APEX.7.115201

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

基幹理工学部

研究成果: Article › 査読

70 被引用数 (Scopus)

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Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV^-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV^- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

本文言語	English
ページ（範囲）	115201
ページ数	1
ジャーナル	Applied Physics Express
巻	7
号	11
DOI	https://doi.org/10.7567/APEX.7.115201
出版ステータス	Published - 2014 11月 1

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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Tamura, S., Koike, G., Komatsubara, A., Teraji, T., Onoda, S., McGuinness, L. P., Rogers, L., Naydenov, B., Wu, E., Yan, L., Jelezko, F., Ohshima, T., Isoya, J., Shinada, T., & Tanii, T. (2014). Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. Applied Physics Express, 7(11), 115201. https://doi.org/10.7567/APEX.7.115201

Tamura, S, Koike, G, Komatsubara, A, Teraji, T, Onoda, S, McGuinness, LP, Rogers, L, Naydenov, B, Wu, E, Yan, L, Jelezko, F, Ohshima, T, Isoya, J, Shinada, T & Tanii, T 2014, 'Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation', Applied Physics Express, vol. 7, no. 11, pp. 115201. https://doi.org/10.7567/APEX.7.115201

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abstract = "Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.",

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AU - Tamura, Syuto

AU - Koike, Godai

AU - Komatsubara, Akira

AU - Teraji, Tokuyuki

AU - Onoda, Shinobu

AU - McGuinness, Liam P.

AU - Rogers, Lachlan

AU - Naydenov, Boris

AU - Wu, E.

AU - Yan, Liu

AU - Jelezko, Fedor

AU - Ohshima, Takeshi

AU - Isoya, Junichi

AU - Shinada, Takahiro

AU - Tanii, Takashi

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AB - Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

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Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

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