We investigated the atomic and electronic structures of the periodic misfit dislocations (MDs) found in GaSb/GaAs (0 0 1). In order to determine the details of these structures, we carried out the first-principle total energy calculations. The characteristic feature in the MDs is the appearance of the anion-anion or cation-cation bond in order to avoid the formation of dangling bonds. As a result, the dislocation core structure form five- and seven-membered rings. These MDs electronically cause the impurity levels in the band gap. The individual MDs have the possibility to form one-dimensional electron- and hole-paths along the dislocation line.
|ジャーナル||Physica B: Condensed Matter|
|出版ステータス||Published - 2003 12月 31|
|イベント||Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark|
継続期間: 2003 7月 28 → 2003 8月 1
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