Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)

Nori Miyagishima*, Takuya Shinoda, Ken Suzuki, Tadasuke Kaneko, Kyozaburo Takeda, Kenji Shiraishi, Tomonori Ito


研究成果: Conference article査読

2 被引用数 (Scopus)


We investigated the atomic and electronic structures of the periodic misfit dislocations (MDs) found in GaSb/GaAs (0 0 1). In order to determine the details of these structures, we carried out the first-principle total energy calculations. The characteristic feature in the MDs is the appearance of the anion-anion or cation-cation bond in order to avoid the formation of dangling bonds. As a result, the dislocation core structure form five- and seven-membered rings. These MDs electronically cause the impurity levels in the band gap. The individual MDs have the possibility to form one-dimensional electron- and hole-paths along the dislocation line.

ジャーナルPhysica B: Condensed Matter
出版ステータスPublished - 2003 12月 31
イベントProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
継続期間: 2003 7月 282003 8月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学


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