TY - GEN
T1 - Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films
AU - Takeuchi, Toshio
AU - Nishinaga, Jiro
AU - Kawaharazuka, Atsushi
AU - Horikoshi, Yoshiji
PY - 2010
Y1 - 2010
N2 - High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga 2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.
AB - High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga 2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.
KW - Gallium oxide
KW - High resolution X-ray photoelectron spectroscopy
KW - Nanolayered structure
KW - Radio frequency magnetron sputtering
KW - Valence band density of states
UR - http://www.scopus.com/inward/record.url?scp=77952281732&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952281732&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/DDF.297-301.849
DO - 10.4028/www.scientific.net/DDF.297-301.849
M3 - Conference contribution
AN - SCOPUS:77952281732
SN - 3908451809
SN - 9783908451808
VL - 297-301
T3 - Defect and Diffusion Forum
SP - 849
EP - 852
BT - Defect and Diffusion Forum
ER -