Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films

Toshio Takeuchi*, Jiro Nishinaga, Atsushi Kawaharazuka, Yoshiji Horikoshi

*この研究の対応する著者

研究成果: Conference contribution

抄録

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga 2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

本文言語English
ホスト出版物のタイトルDefect and Diffusion Forum
ページ849-852
ページ数4
297-301
DOI
出版ステータスPublished - 2010

出版物シリーズ

名前Defect and Diffusion Forum
297-301
ISSN(印刷版)10120386

ASJC Scopus subject areas

  • 材料科学一般
  • 凝縮系物理学
  • 放射線

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