TY - JOUR
T1 - Atomic switches
T2 - Atomic-movement-controlled nanodevices for new types of computing
AU - Hino, Takami
AU - Hasegawa, Tsuyoshi
AU - Terabe, Kazuya
AU - Tsuruoka, Tohru
AU - Nayak, Alpana
AU - Ohno, Takeo
AU - Aono, Masakazu
PY - 2011/2
Y1 - 2011/2
N2 - Atomic switches are nanoionic devices that control the diffusion of metal cations and their reduction/oxidation processes in the switching operation to form/annihilate a metal atomic bridge, which is a conductive path between two electrodes in the on-state. In contrast to conventional semiconductor devices, atomic switches can provide a highly conductive channel even if their size is of nanometer order. In addition to their small size and low on-resistance, their nonvolatility has enabled the development of new types of programmable devices, which may achieve all the required functions on a single chip. Three-terminal atomic switches have also been developed, in which the formation and annihilation of a metal atomic bridge between a source electrode and a drain electrode are controlled by a third (gate) electrode. Three-terminal atomic switches are expected to enhance the development of new types of logic circuits, such as nonvolatile logic. The recent development of atomic switches that use a metal oxide as the ionic conductive material has enabled the integration of atomic switches with complementary metal-oxide-semiconductor (CMOS) devices, which will facilitate the commercialization of atomic switches. The novel characteristics of atomic switches, such as their learning and photosensing abilities, are also introduced in the latter part of this review.
AB - Atomic switches are nanoionic devices that control the diffusion of metal cations and their reduction/oxidation processes in the switching operation to form/annihilate a metal atomic bridge, which is a conductive path between two electrodes in the on-state. In contrast to conventional semiconductor devices, atomic switches can provide a highly conductive channel even if their size is of nanometer order. In addition to their small size and low on-resistance, their nonvolatility has enabled the development of new types of programmable devices, which may achieve all the required functions on a single chip. Three-terminal atomic switches have also been developed, in which the formation and annihilation of a metal atomic bridge between a source electrode and a drain electrode are controlled by a third (gate) electrode. Three-terminal atomic switches are expected to enhance the development of new types of logic circuits, such as nonvolatile logic. The recent development of atomic switches that use a metal oxide as the ionic conductive material has enabled the integration of atomic switches with complementary metal-oxide-semiconductor (CMOS) devices, which will facilitate the commercialization of atomic switches. The novel characteristics of atomic switches, such as their learning and photosensing abilities, are also introduced in the latter part of this review.
KW - atomic switches
KW - learning ability
KW - nanoionic devices
KW - nonvolatility
KW - photosensing ability
KW - three-terminal switch
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U2 - 10.1088/1468-6996/12/1/013003
DO - 10.1088/1468-6996/12/1/013003
M3 - Review article
AN - SCOPUS:79952968905
SN - 1468-6996
VL - 12
JO - Science and Technology of Advanced Materials
JF - Science and Technology of Advanced Materials
IS - 1
M1 - 013003
ER -