抄録
An atomically flat GaAs(001) surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. This method includes low-temperature cleaning and high-temperature smoothening of the GaAs subtle surface. The reflection high energy electron diffraction (RHEED) and AFM study showed that a wide terrace with a 1 monolayer step height was observed when a GaAs(001) surface was cleaned at 400°C and smoothened at 540°C with atomic-H irradiation. The irradiation of atomic-H during the high temperature process maintained a certain surface stoichiometry, and resulted in an atomically flat substrate surface. This technique is useful for heterovalent epitaxy systems involving a single chamber growth system.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L1367-L1369 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 36 |
| 号 | 10 SUPPL. B |
| DOI | |
| 出版ステータス | Published - 1997 10月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）