抄録
The electron backscattering effect which is important for the quantitative interpretation of "matrix effects" in AES is investigated by applying the Monte Carlo calculation technique. The present calculation model is based on the use of a precise elastic scattering cross-section obtained by the partial wave expansion method, as well as on the combined use of Gryzinski's excitation function and Bethe's stopping power for inelastic scattering. Systematic calculations of the backscattering factors were performed for over 25 materials including pure elements, compounds, and alloys, which have been widely used as standard materials for practical Auger analysis. The results should enable the accuracy of quantitative analysis by AES to be improved.
本文言語 | English |
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ページ(範囲) | 386-408 |
ページ数 | 23 |
ジャーナル | Surface Science |
巻 | 112 |
号 | 3 |
DOI | |
出版ステータス | Published - 1981 12月 2 |
外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学
- 表面および界面
- 表面、皮膜および薄膜
- 材料化学