The photoluminescence (PL) in the hydrogenated samples of amorphous silicon oxynitride and silicon nitride films with different nitrogen contents was investigated. The PL of the two materials showed many similarities indicating the same chemical structure, viz. Si-N bonds, and similar band-tail states. The PL decay process indicated that the recombination between localized band-tail states consisted of excitonlike and radiative tunneling recombination processes. Increase in the abundance ratio of nitrogen+oxygen or that of nitrogen resulted in a wider PL spectrum with higher peak energy.
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