TY - JOUR
T1 - Battery-inspired, nonvolatile, and rewritable memory architecture
T2 - A radical polymer-based organic device
AU - Yonekuta, Yasunori
AU - Susuki, Kentaro
AU - Oyaizu, Kenichi
AU - Honda, Kenji
AU - Nishide, Hiroyuki
PY - 2007/11/21
Y1 - 2007/11/21
N2 - A nonvolatile, bistable, and rewritable organic memory device based on radical polymers was prepared and tested. The excellent performance of a battery-inspired memory architecture with a configuration of p- and n-type charge-transporting radical polymers sandwiching a dielectric layer was characterized. The ON-OFF ratio was more than 4 orders of magnitude, and retention and endurance cycles of more than 104 and 103, respectively, were accomplished.
AB - A nonvolatile, bistable, and rewritable organic memory device based on radical polymers was prepared and tested. The excellent performance of a battery-inspired memory architecture with a configuration of p- and n-type charge-transporting radical polymers sandwiching a dielectric layer was characterized. The ON-OFF ratio was more than 4 orders of magnitude, and retention and endurance cycles of more than 104 and 103, respectively, were accomplished.
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U2 - 10.1021/ja075553p
DO - 10.1021/ja075553p
M3 - Article
C2 - 17963388
AN - SCOPUS:36448948331
SN - 0002-7863
VL - 129
SP - 14128
EP - 14129
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 46
ER -