Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

Iwao Ohdomari; Toyohiro Chikyow; Hiroshi Kawarada; Kazuo Konuma; Masakazu Kakumu; Kazuhiko Hashimoto; Itsuro Kimura; Kenji Yoneda

doi:10.1063/1.336930

Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

Iwao Ohdomari^*, Toyohiro Chikyow, Hiroshi Kawarada, Kazuo Konuma, Masakazu Kakumu, Kazuhiko Hashimoto, Itsuro Kimura, Kenji Yoneda

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

The behavior of ion implanted As atoms during MoSi₂ formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi₂/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi₂/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi₂ formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.

本文言語	English
ページ（範囲）	3073-3076
ページ数	4
ジャーナル	Journal of Applied Physics
巻	59
号	9
DOI	https://doi.org/10.1063/1.336930
出版ステータス	Published - 1986

ASJC Scopus subject areas

物理学および天文学（全般）

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@article{c3c65452cfdb4514854cfdeab28e7a10,

title = "Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation",

abstract = "The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.",

author = "Iwao Ohdomari and Toyohiro Chikyow and Hiroshi Kawarada and Kazuo Konuma and Masakazu Kakumu and Kazuhiko Hashimoto and Itsuro Kimura and Kenji Yoneda",

year = "1986",

doi = "10.1063/1.336930",

language = "English",

volume = "59",

pages = "3073--3076",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

AU - Ohdomari, Iwao

AU - Chikyow, Toyohiro

AU - Kawarada, Hiroshi

AU - Konuma, Kazuo

AU - Kakumu, Masakazu

AU - Hashimoto, Kazuhiko

AU - Kimura, Itsuro

AU - Yoneda, Kenji

PY - 1986

Y1 - 1986

N2 - The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.

AB - The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.

UR - http://www.scopus.com/inward/record.url?scp=36549092155&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549092155&partnerID=8YFLogxK

U2 - 10.1063/1.336930

DO - 10.1063/1.336930

M3 - Article

AN - SCOPUS:36549092155

SN - 0021-8979

VL - 59

SP - 3073

EP - 3076

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

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