Beryllium implantation doping of silicon carbide

T. Henkel*, Y. Tanaka, Naoto Kobayashi, S. Nishizawa, S. Hishita

*この研究の対応する著者

研究成果: Chapter

抄録

Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering/channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 °C and 1700 °C. The use of a pre-anneal process at 1000 °C before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 °C.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
出版社Trans Tech Publ Ltd
338
出版ステータスPublished - 2000
外部発表はい
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 1999 10月 101999 10月 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

ASJC Scopus subject areas

  • 材料科学一般

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