抄録
Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering/channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 °C and 1700 °C. The use of a pre-anneal process at 1000 °C before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 °C.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Materials Science Forum |
| 出版社 | Trans Tech Publ Ltd |
| 巻 | 338 |
| 出版ステータス | Published - 2000 |
| 外部発表 | はい |
| イベント | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA 継続期間: 1999 10月 10 → 1999 10月 15 |
Other
| Other | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials |
|---|---|
| City | Research Triangle Park, NC, USA |
| Period | 99/10/10 → 99/10/15 |
ASJC Scopus subject areas
- 材料科学（全般）