抄録
Highly-alloyed Au-Ag bonding wire could be effective in saving material costs. We investigated the effects of Ag alloying on ball formation, bond strength and bond reliability. Even with high Ag concentration (approx. 50at%), ball was formed spherically. Bond strength and ball deformability were good enough for IC's assembling when concentration of Ag was less than 30at%. Thermal reliability of bonds between Au-Ag wire and Al pad had the unique dependence of Ag concentration. Ball bonds of Au-14at%Ag yielded significant degradation through annealed. On the contrary bonds of Au-24at%Ag provided as good reliability as a commercial pure Au wire after annealed at 473K-1000h. The bond reliability has the connection with intermetallic growth as well as diffusion behavior at the bond interface. The growth of intermetallics was different from that of pure Au/Al bonds. Optimizing the Ag concentration in the wire was effective in improving the bond reliability.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 450-455 |
| ページ数 | 6 |
| ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
| 巻 | 3906 |
| 出版ステータス | Published - 1999 12月 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1999 International Symposium on Microelectronics - Chicago, IL, USA 継続期間: 1999 10月 26 → 1999 10月 28 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- コンピュータ サイエンスの応用
- 応用数学
- 電子工学および電気工学