Boron δ-doped (111) diamond solution gate field effect transistors

Robert Edgington, A. Rahim Ruslinda, Syunsuke Sato, Yuichiro Ishiyama, Kyosuke Tsuge, Tasuku Ono, Hiroshi Kawarada, Richard B. Jackman*


研究成果: Article査読

13 被引用数 (Scopus)


A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (1. 1. 1) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I- V) characteristics in comparison to previous similar devices fabricated on (1. 0. 0) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200 μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36. mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.

ジャーナルBiosensors and Bioelectronics
出版ステータスPublished - 2012 3月 15

ASJC Scopus subject areas

  • バイオテクノロジー
  • 生物理学
  • 生体医工学
  • 電気化学


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