We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.
|5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009
|Published - 2009
|5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009 - Denver, CO, United States
継続期間: 2009 4月 21 → 2009 4月 23
|5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009
|09/4/21 → 09/4/23
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